Samsung unveils three new memory technologies for AI data centers

Samsung used the FMS conference to announce three next-generation memory technologies for AI infrastructure: zHBM, zNAND-O, and BV-NAND. All three rely on advanced wafer-bonding techniques and target different parts of the AI data center memory stack.

Why it matters: This lands amid an AI-driven memory shortage severe enough to push Microsoft back to 8GB RAM laptops and leave a billion dollars of Apple's iPhone chips unpackaged, and as Chinese memory maker CXMT chases 30% of the global DRAM market. New high-density memory technology from Samsung is one of the few ways supply could catch up with AI's appetite for HBM and DRAM.